Transparent and Flexible Thin Film Transistors with Solution-Based Chalcogenide Materials

被引：5
作者：
Salas-Villasenor, A. L. [1 ]
Mejia, I. [1 ]
Quevedo-Lopez, M. A. [1 ]
机构：
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2014年 / 3卷 / 04期
关键词：
FIELD-EFFECT TRANSISTORS; AMORPHOUS-SILICON; DIELECTRIC LAYER; MOBILITY; ELECTRONICS; STRAIN; TFTS; SEMICONDUCTORS; PERFORMANCE; FABRICATION;
D O I：
10.1149/2.019404jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The fabrication and characterization of optically transparent high performance photolithography-based cadmium sulfide (CdS) thin film transistors (TFT) on polymeric and glass substrates using chemical bath deposition (CBD) is reported. The process utilizes a maximum processing temperature of 115 degrees C, which is compatible with most flexible substrates. The extracted mobility for the fabricated CdS-TFTs ranged from similar to 10-18 cm(2)/V-s with a threshold voltage of similar to 1.6-4.8 V and I-on/I-off ratio of similar to 10(7). This carrier mobility is among the highest reported for a fully patterned TFT fabricated with CdS as semiconductor and the first transparent CdS-TFTs built on a flexible substrate with good optical transparency and excellent mechanical flexibility. (C) 2014 The Electrochemical Society. All rights reserved.
引用
收藏
页码：P107 / P110
页数：4
相关论文
共 39 条
  • [1] Operating principle of polymer insulator organic thin-film transistors exposed to moisture -: art. no. 074504
    Bäcklund, TG
    Osterbacka, R
    Stubb, H
    Bobacka, J
    Ivaska, A
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)
  • [2] Growth, characterization and application of US thin films deposited by chemical bath deposition
    Chang, YJ
    Munsee, CL
    Herman, GS
    Wager, JF
    Mugdur, P
    Lee, DH
    Chang, CH
    [J]. SURFACE AND INTERFACE ANALYSIS, 2005, 37 (04) : 398 - 405
  • [3] Dual-gate pentacene organic field-effect transistors based on a nanoassembled SiO2 nanoparticle thin film as the gate dielectric layer -: art. no. 064102
    Cui, TH
    Liang, GR
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (06) : 1 - 3
  • [4] VAPOR-DEPOSITED THIN-FILM PIEZOELECTRIC TRANSDUCERS
    DEKLERK, J
    KELLY, EF
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (04) : 506 - &
  • [5] PMMA-Ta2O5 bilayer gate dielectric for low operating voltage organic FETs
    Deman, AL
    Tardy, J
    [J]. ORGANIC ELECTRONICS, 2005, 6 (02) : 78 - 84
  • [6] MECHANICAL FLEXIBILITY OF ZINC OXIDE THIN-FILM TRANSISTORS PREPARED BY TRANSFER PRINTING METHOD
    Eun, K. T.
    Hwang, W. J.
    Sharma, B. K.
    Ahn, J. H.
    Lee, Y. K.
    Choa, S. H.
    [J]. MODERN PHYSICS LETTERS B, 2012, 26 (12):
  • [7] Field-effect mobility of amorphous silicon thin-film transistors under strain
    Gleskova, H
    Hsu, PI
    Xi, Z
    Sturm, JC
    Suo, Z
    Wagner, S
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 732 - 735
  • [8] Effect of UV/ozone treatment of the dielectric layer on the device performance of pentacene thin film transistors
    Guo, Dong
    Entani, Shiro
    Ikeda, Susumu
    Saiki, Koichiro
    [J]. CHEMICAL PHYSICS LETTERS, 2006, 429 (1-3) : 124 - 128
  • [9] Heeney M, 2009, ELECTRON MATER SCI T, P261, DOI 10.1007/978-0-387-74363-9_9
  • [10] Grain size dependent mobility in polycrystalline organic field-effect transistors
    Horowitz, G
    Hajlaoui, ME
    [J]. SYNTHETIC METALS, 2001, 122 (01) : 185 - 189
1234