High optical quality AlInGaN by metalorganic chemical vapor deposition

被引：101

作者：

Aumer, ME ^{[1
]}

LeBoeuf, SF ^{[1
]}

McIntosh, FG ^{[1
]}

Bedair, SM ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 21期

关键词：

D O I：

10.1063/1.125336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the metalorganic chemical vapor deposition of the quaternary alloy AlInGaN. We found it desirable to grow quaternary films at temperatures greater than 855 degrees C in order to suppress deep level emissions in the room-temperature photoluminescence. Details of the conditions necessary to grow In0.1Ga0.9N at 875 degrees C are presented. Strained and relaxed AlInGaN films were grown with good optical and structural properties for AlN compositions up to 26% and InN content up to 11%. The effects of strain were observed by a difference in the band gap between thin and thick films with the same compositions. The potential impact of the use of quaternary films is discussed regarding strain engineering for the improvement of present device designs. (C) 1999 American Institute of Physics. [S0003-6951(99)04647-1].

引用

页码：3315 / 3317

页数：3

共 11 条

[1] HIGH-QUALITY INGAN FILMS BY ATOMIC LAYER EPITAXY
BOUTROS, KS
MCINTOSH, FG
ROBERTS, JC
BEDAIR, SM
PINER, EL
ELMASRY, NA
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (13) : 1856 - 1858
[2] Eastman L, 1997, MRS INTERNET J N S R, V2, pU3
[3] Large band gap bowing of InxGa1-xN alloys
McCluskey, MD
Van de Walle, CG
Master, CP
Romano, LT
Johnson, NM
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (21) : 2725 - 2726
[4] McIntosh FG, 1996, APPL PHYS LETT, V68, P40, DOI 10.1063/1.116749
[5] EMERGING GALLIUM NITRIDE BASED DEVICES
MOHAMMAD, SN
SALVADOR, AA
MORKOC, H
[J]. PROCEEDINGS OF THE IEEE, 1995, 83 (10) : 1306 - 1355
[6] RT-CW operation of InGaN multi-quantum-well structure laser diodes
Nakamura, S
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 277 - 284
[7] Effect of hydrogen on the indium incorporation in InGaN epitaxial films
Piner, EL
Behbehani, MK
ElMasry, NA
McIntosh, FG
Roberts, JC
Boutros, KS
Bedair, SM
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (04) : 461 - 463
[8] RUFFENACHCLUR S, 1997, MRS INTERNET J N S R, V2
[9] Optical band gap in Ga1-xInxN (O<x<0.2) on GaN by photoreflection spectroscopy
Wetzel, C
Takeuchi, T
Yamaguchi, S
Katoh, H
Amano, H
Akasaki, I
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (14) : 1994 - 1996
[10] ENERGY BANDGAP AND LATTICE-CONSTANT CONTOURS OF 3-5 QUATERNARY ALLOYS OF FORM AXBYCZD OR ABXCYDZ
WILLIAMS, CK
GLISSON, TH
HAUSER, JR
LITTLEJOHN, MA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (05) : 639 - 646

← 1 2 →