Hybrid Diamond-Silicon Carbide Structures Incorporating Silicon-Vacancies in Diamond as Quantum Emitters

被引:0
作者
Zhang, Jingyuan Linda [1 ]
Ishiwata, Hitoshi [2 ]
Radulaski, Marina [1 ]
Babinec, Thomas M. [1 ]
Mueller, Kai [1 ]
Lagoudakis, Konstantinos G. [1 ]
Edgington, Robert [2 ]
Alassaad, Kassem [3 ]
Ferro, Gabriel [3 ]
Melosh, Nicholas A. [2 ]
Shen, Zhi-Xun [2 ]
Vuckovic, Jelena [1 ]
机构
[1] Stanford Univ, EL Ginzton Lab, Stanford, CA 94305 USA
[2] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA
[3] Univ Lyon, Lab Multimat & Interfaces, F-69622 Villeurbanne, France
来源
2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2015年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate a novel materials technique for generating several hybrid solid state nano- and micro-photonic devices. Our approach combines the growth of nanoscale (similar to 100 nm) and micron scale (similar to 2 mu m) diamonds on silicon carbide (3C and 4H polytype) substrate via chemical vapor deposition (CVD) from molecular diamond ('diamondoid') seed with the use of these particles as a hard mask for pattern transfer into the substrate. Both diamond and silicon carbide are well known to possess optically active spins for applications in quantum information processing, metrology and sensing. In our case, diamond silicon vacancy centers are generated via plasma-assisted diffusion from the silicon carbide substrate. (C) 2014 Optical Society of America
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页数:2
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