A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates

被引：3

作者：

Wang, Hui ^{[1
,2
]}

Wang, Ning ^{[1
,2
]}

Jiang, Ling-Li ^{[1
,2
]}

Lin, Xin-Peng ^{[1
,2
]}

Zhao, Hai-Yue ^{[1
,2
]}

Yu, Hong-Yu ^{[1
,2
]}

机构：

[1] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

[2] Shenzhen Key Laborary Third Generat Semicond, Shenzhen 518055, Peoples R China

来源：

CHINESE PHYSICS B | 2017年 / 26卷 / 04期

关键词：

AlGaN/GaN; high electron mobility transistor; split floating gates; enhancement mode; THRESHOLD VOLTAGE; HEMTS;

D O I：

10.1088/1674-1056/26/4/047305

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A novel enhancement-mode AlGaN/GaN high electron mobility transistor (HEMT) is proposed and studied. Specifically, several split floating gates (FGs) with negative charges are inserted to the conventional MIS structure. The simulation results revealed that the Vth decreases with the increase of polarization sheet charge density and the tunnel dielectric (between FGs and AlGaN) thickness, while it increases with the increase of FGs sheet charge density and blocking dielectric (between FGs and control gate) thickness. In the case of the same gate length, the Vth will left shift with decreasing FG length. More interestingly, the split FGs could significantly reduce the device failure probability in comparison with the single large area FG structure.

引用

页数：5

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