A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors (HBT's)

被引：36
作者：
Rios, JMM [1 ]
Lunardi, LM [1 ]
Chandrasekhar, S [1 ]
Miyamoto, Y [1 ]
机构：
[1] TOKYO INST TECHNOL,TOKYO 152,JAPAN
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1997年 / 45卷 / 01期
关键词：
D O I：
10.1109/22.552030
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A complete method for parameter extraction from small-signal measurements of InP-based heterojunction bipolar transistors (HBT's) is presented. Employing analytically derived equations, a numerical solution is sought for the best tit between the model and the measured data. Through parasitics extraction and an optimization process, a realistic model for a self-aligned HBT technology is obtained. The results of the generated s-parameters from the model for a 2 x 10 mu m(2) emitter area device are presented over a frequency range of 250 MHz-36 GHz with excellent agreement to the measured data.
引用
收藏
页码：39 / 45
页数：7
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