Actively stabilized single-frequency vertical-external-cavity AlGaAs laser

被引：76
作者：
Holm, MA [1 ]
Ferguson, DBAI [1 ]
Dawson, MD [1 ]
机构：
[1] Univ Strathclyde, Inst Photon, Wolfson Ctr, Glasgow G4 0NW, Lanark, Scotland
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 12期
关键词：
diode pumped; semiconductor lasers; single frequency; VCSEL; VECSEL;
D O I：
10.1109/68.806843
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on actively stabilized single-frequency operation of a vertical-external-cavity surface-emitting semiconductor laser (VECSEL), The VECSEL was locked to a 300-MHz reference cavity allowing a relative frequency measurement that indicated a laser linewidth of 3 kHz, Coarse tuning over an 8.5-nm range was achieved, with fine tuning over 250 MHz. The laser produced up to 42 mW of output power in single-frequency operation.
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页码：1551 / 1553
页数：3
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