A 1-40-GHz LNA MMIC Using Multiple Bandwidth Extension Techniques

被引：26

作者：

Hu, Jianquan ^{[1
]}

Ma, Kaixue ^{[1
,2
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Phys, Chengdu 610054, Sichuan, Peoples R China

[2] Tianjin Univ, Sch Microelect, Tianjin 300072, Peoples R China

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2019年 / 29卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Broadband amplifier; GaAs pseudomorphic high-electron-mobility transistor (pHEMT); low-noise amplifier (LNA); monolithic microwave integrated circuit (MMIC); series peaking technique; shunt peaking technique; LOW-NOISE AMPLIFIER; FEEDBACK;

D O I：

10.1109/LMWC.2019.2908883

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A broadband low-noise amplifier (LNA) is presented in this letter. By using multiple bandwidth extension methods, including feedback, shunt, and double series peaking techniques, the proposed LNA achieves a measured average gain of 26.5 dB from 1 to 40 GHz and minimal noise figure of 2.8 dB with better than 9-dB input-output return loss. The circuit is fabricated using 0.15-mu m GaAs E-mode pseudomorphic high-electron-mobility transistor (pHEMT) process with 1.06-mm(2) chip area. The LNA is supplied by a single dc voltage of 4.5 V. The proposed LNA achieves the bandwidth comparable to that of the distributed amplifier (DA) while obtaining higher power gain than DA fabricated using the similar process.

引用

页码：336 / 338

页数：3

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