Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs

被引：64
作者：
Jaksic, A [1 ]
Ristic, G
Pejovic, M
Mohammadzadeh, A
Sudre, C
Lane, W
机构：
[1] NMRC, Cork, Ireland
[2] Univ Toronto, Sunnybrook Hlth Sci Ctr, Toronto, ON M4N 3M5, Canada
[3] Univ Nish, Fac Elect Engn, Nish, Yugoslavia
[4] ESA ESTEC, Noordwijk, Netherlands
[5] Natl Microelect Res Ctr, Cork, Ireland
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2002年 / 49卷 / 03期
关键词：
characterization; RADFET; radiation dosimeters;
D O I：
10.1109/TNS.2002.1039667
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gamma-ray irradiation and post-irradiation responses have been studied for the two types of radiation sensitive p-channel MOSFETs (RADFETs) from different manufacturers. In addition to, in dosimetric applications standard, threshold voltage measurements at a single specified current, transistor I-V and charge-pumping characteristics have been monitored. This has been shown to be useful in providing a more detailed insight into processes that occur during irradiation and subsequent annealing at elevated temperature. In particular, the role of switching oxide traps (also known as "border" traps) and electron traps in studied devices has been revealed.
引用
收藏
页码：1356 / 1363
页数：8
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