Creating excitons in II-VI quantum wells with large binding energies

被引：0

作者：

Urbaszek, B ^{[1
]}

Morhain, C ^{[1
]}

Bradford, C ^{[1
]}

O'Donnell, CB ^{[1
]}

Telfer, SA ^{[1
]}

Tang, X ^{[1
]}

Balocchi, A ^{[1
]}

Prior, KA ^{[1
]}

Cavenett, BC ^{[1
]}

机构：

[1] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

COMMAD 2000 PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/COMMAD.2000.1022894

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The wide bandgap II-VI semiconductors have unique properties which allow the possibility of suppressing the exciton-phonon scattering up to room temperature in quantum well structures designed so that the exciton excitation E1s-->2s > hnu(LO). High quality ZnSe quantum wells in MgS and ZnS quantum wells in ZnMgS have been grown by MBE and these have excellent optical properties. Magnetic field and linewidth temperature dependent measurements have been used to determine the exciton binding energies and to investigate the exciton-LO phonon scattering processes. The results show the possibility of suppressing exciton-LO phonon scattering in these structures.

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页码：73 / 80

页数：8

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