Mechanical stress-induced switching kinetics of ferroelectric thin films at the nanoscale

被引:26
作者
Alsubaie, A. [1 ,2 ]
Sharma, P. [1 ]
Liu, G. [1 ]
Nagarajan, V. [1 ]
Seidel, J. [1 ]
机构
[1] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[2] Taif Univ, Sch Phys, At Taif, Saudi Arabia
基金
澳大利亚研究理事会;
关键词
ferroelectrics; scanning probe microscopy; nanotechnology; strain; stress; FERROELASTIC DOMAIN-WALLS; DIELECTRIC-PROPERTIES; POLARIZATION; NUCLEATION; BEHAVIOR;
D O I
10.1088/1361-6528/aa536d
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigate ferroelectric domain structure and piezoelectric response under variable mechanical compressive stress in Pb(Zr0.2TiO0.8)O-3 ( PZT) thin films using high-resolution piezoresponse force microscopy (PFM) and an in situ sample bending stage. Measurements reveal a drastic change in the ferroelectric domain structure which is presented along with details of the mediating switching process involving domain wall motion, nucleation, and domain wall roughening under an applied external mechanical stimulus. Furthermore, local PFM hysteresis loops reveal significant changes in the observed coercive biases under applied stress. The PFM hysteresis loops become strongly imprinted under increasing applied compressive stress.
引用
收藏
页数:8
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