Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI

被引：7

作者：

Jain, Sameer H. ^{[1
]}

Lederer, Dimitri ^{[2
]}

Kumar, Arvind ^{[1
]}

Saroop, Sudesh ^{[1
]}

Prindle, Chris ^{[1
]}

Srinivasan, P. ^{[3
]}

Liu, Wen ^{[4
]}

Achanta, Ravi ^{[1
]}

Kaltalioglu, Erdem ^{[1
]}

Moss, Stephen ^{[5
]}

Freeman, Greg ^{[1
]}

Colestock, Paul ^{[6
]}

机构：

[1] Globalfoundries Inc, Hopewell Jn, NY 12533 USA

[2] Catholic Univ Louvain, Louvain La Neuve, Belgium

[3] Globalfoundries Inc, Malta, NY USA

[4] Globalfoundries Inc, Essex Jn, VT USA

[5] Globalfoundries Inc, Essex Jn, NY USA

[6] Globalfoundries Inc, Santa Clara, CA USA

来源：

IEEE 51ST EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2021) | 2021年

关键词：

millimeter-wave (mm-wave); 5G; power amplifier (PA); silicon On Insulator (SOI); ADNFET and CMOS;

D O I：

10.1109/ESSDERC53440.2021.9631775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The adoption of 5G mmWave is upon us, with major cell phone companies having introduced phones with mmWave capabilities and major US cellphone providers building their infrastructure out. Parts manufactured using Globalfoundries 45RFSOI technology have made significant traction in the infrastructure space. A good part of the success of this technology is based on the excellent high frequency performance of the thin oxide device, the high resistivity substrate and the high voltage support enabled by the use of stacking in SOI technologies. In this paper we introduce a new transistor developed to improve the output power of mmWave power amplifiers (PA). It demonstrates similar to 1.2X increase in maximum voltage, reduced linear mode resistance and similar to 20% increases in fMAx to >400 GHz.

引用

页码：199 / 202

页数：4

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