Electrochemical Etching of Copper Foils for Graphene Preparation by CVD

被引：0

作者：

Machac, P. ^{[1
]}

Tichy, T. ^{[1
]}

机构：

[1] Univ Chem & Technol, Dept Solid State Engn, 5 Tech, Prague 16628 6, Czech Republic

来源：

2018 12TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS (ASDAM) | 2018年

关键词：

MORPHOLOGY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The contribution is focused to modification of Cu foils prior to graphene growth by the method of chemical vapour deposition, with the aim to prepare higher quality graphene. The Cu foils are chemically polished prior to the process in various chemical solutions. Influence of these modifications has principal meaning to graphene growth; single-layer graphene has been prepared.

引用

页码：69 / 72

页数：4

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