Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode

被引：7
作者：
Gaspari, V [1 ]
Fobelets, K
Ding, PW
Velazquez-Perez, JE
Olsen, SH
O'Neill, AG
Zhang, J
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2BT, England
[2] Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain
[3] Univ Newcastle Upon Tyne, Dept Elect Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[4] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2BT, England
来源：
IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 05期
关键词：
body-effect factor; dynamic threshold; low temperature; SiGe; strained-Si (s-Si);
D O I：
10.1109/LED.2004.827286
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dynamic threshold (DT) behavior of strained-Si (s-Si) n-type surface channel MOSFETs has been investigated for operating temperatures ranging from 10 to 300 K. The temperature dependence of the coefficients governing the body effect is presented, and their influence on the performance enhancement due to DT-mode operation is analyzed. The maximum transcon-ductance is higher for the s-Si MOSFET in both operating modes over the whole temperature range. The relative improvement of the maximum transconductance between, normal and DT-mode operation is found to be lower for the s-Si MOSFET (30%) compared to the Si control MOSFET (55%) over the whole temperature range. The subthreshold slope for the Si control follows the calculated behavior in both normal and DT-mode, and the subthreshold performance enhancement of the s-Si device due to DT-mode operation is closely approximated by the theoretical value (26%).
引用
收藏
页码：334 / 336
页数：3
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