Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD

被引：2

作者：

Zhang Zeng ^{[1
,2
]}

Zhang Rong ^{[1
,2
]}

Xie Zi-Li ^{[1
,2
]}

Liu Bin ^{[1
,2
]}

Xiu Xiang-Qian ^{[1
,2
]}

Li Yi ^{[1
,2
]}

Fu De-Yi ^{[1
,2
]}

Lu Hai ^{[1
,2
]}

Chen Peng ^{[1
,2
]}

Han Ping ^{[1
,2
]}

Zheng You-Dou ^{[1
,2
]}

Tang Chen-Guang ^{[3
]}

Chen Yong-Hai ^{[3
]}

Wang Zhan-Guo ^{[3
]}

机构：

[1] Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

ACTA PHYSICA SINICA | 2009年 / 58卷 / 05期

关键词：

InN; dislocation; carrier origination; localization; FUNDAMENTAL-BAND GAP; TEMPERATURE-DEPENDENCE;

D O I：

10.7498/aps.58.3416

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

InN thin films with different thicknesses are grown by metal organic chemical vapor deposition, and the dislocations, electrical and optical properties are investigated. Based on the model of mosaic crystal, by means of X-ray diffraction skew geometry scan, the edge dislocation densities of 4.2 x 10(10) cm(-2) and 6.3 x 10(10) cm(-2) are fitted, and the decrease of twist angle and dislocation density in thicker films are observed. The carrier concentrations of 9 x 10(18) cm(-3) and 1.2 x 10(18) cm(-3) are obtained by room temperature Hall effect measurement. V-N is shown to be the origin of background carriers, and the dependence of concentration and mobility on film thickness is explained. By the analysis of S-shape temperature dependence of photoluminescence peak, the defects induced carrier localization is suggested be involved in the photoluminescence. Taking both the localization and energy band shrinkage effect into account, the localization energies of 5.05 meV and 5.58 meV for samples of different thicknesses are calculated, and the decrease of the carrier localization effect in the thicker sample can be attributed to the reduction of defects.

引用

页码：3416 / 3420

页数：5

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