Silicon surface morphology study after exposure to tailored femtosecond pulses

被引：32
作者：
Hommes, V. [1 ]
Miclea, M. [1 ]
Hergenroeder, R. [1 ]
机构：
[1] ISAS, Inst Analyt Sci, D-44139 Dortmund, Germany
来源：
APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 20期
关键词：
femtosecond laser ablation; silicon; pulse shaping; crater morphology; LASER-ABLATION; CRYSTALLINE SILICON; SI; TRANSITIONS; DYNAMICS; DAMAGE; IRRADIATION; THRESHOLDS;
D O I：
10.1016/j.apsusc.2005.08.089
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Temporal pulse shaping of ultrashort laser pulses has been used for laser ablation of semiconductors. Even the simplest double pulse sequence with a delay of several picoseconds shows remarkable differences in the interaction process, compared to a single pulse of the same total energy. We discuss the interaction of double pulses with single crystal silicon sample in the context of crater morphology for multiple pulses on the same spot. The growth of the typical columnar structures in helium at atmospheric pressure is suppressed and the crater bottom is flat despite the Gaussian beam profile. The influence of the temporal pulse shape has to be treated in conjunction with the influence of the other ablation parameters. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：7449 / 7460
页数：12
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