Dielectric, ferroelectric properties of KTa0.65Nb0.35O3 thin films prepared by sol-gel process on Pt(111)/Ti/MgO(100) substrates

被引：9

作者：

Wang, SM ^{[1
]}

Li, ZY

Zhang, DM

Zhang, GS

Sun, JM

Zheng, P

机构：

[1] Hubei Univ, Coll Chem & Mat Sci, Wuhan 430062, Peoples R China

[2] Huazhong Univ Sci & Technol, Wuhan 430074, Peoples R China

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2000年 / 17卷 / 02期

基金：

中国国家自然科学基金;

关键词：

KTa0.65Nb0.35O3; thin film; sol(-)gel method; preparation; property;

D O I：

10.1023/A:1008751603090

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

KTa0.65Nb0.35O3(KTN) thin films were prepared by sol-gel process on Pt(111)/Ti/MgO(100) substrates from KOAc, Ta(OC2H5)(5) and Nb(OC2H5)(5) in ethanol. The KTN thin films had a prefferred (100) orientation on Pt(111)/Ti/MgO(100) substrates and contained a small amount of pyrochlore structure phase. The 0.8-mu m-thick KTN film showed a room-temperature relative permittivity of 2160 and a room-temperature dielectric loss of 0.0098 at 1.0 kHz. The maximum relative permittivity of the KTN film was 4232 at 294 K and 1.0 kHz. The remanent polarization and coercive field of the KTN film were 2.8 mu C/cm(2) and 5.0 kV/cm, respectively, at 263 K.

引用

页码：159 / 162

页数：4

共 12 条

[1]

BAO DH, 1993, CHINESE SCI BULL, V38, P550

[2]

DEBELY P, 1979, AM CERAM SOC BULL, V58, P606

[3] PREPARATION OF POTASSIUM TANTALATE NIOBATE BY SOL-GEL METHOD [J].

HIRANO, S ;

YOGO, T ;

KIKUTA, K ;

MORISHITA, T ;

ITO, Y .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (06) :1701-1704

[4] EPITAXIAL-GROWTH AND THE CRYSTALLOGRAPHIC, DIELECTRIC, AND PYROELECTRIC PROPERTIES OF LANTHANUM-MODIFIED LEAD TITANATE THIN-FILMS [J].

IIJIMA, K ;

TAKAYAMA, R ;

TOMITA, Y ;

UEDA, I .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) :2914-2919

[5] CHARACTERIZATION OF POTASSIUM TANTALUM NIOBATE FILMS FORMED BY METALORGANIC DEPOSITION [J].

MANTESE, JV ;

MICHELI, AL ;

SCHUBRING, NW ;

CATALAN, AB ;

CHEN, YL ;

WALDO, RA ;

WONG, CA .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) :615-619

[6] PREPARATION OF KTAO3 AND KNBO3 SOLID-SOLUTIONS THROUGH SOL-GEL PROCESSING [J].

NAZERI, A ;

KAHN, M .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (08) :2125-2133

[7] MICROSTRUCTURE OF KTAXNB1-XO3 THIN-FILMS ON MGO(100) SINGLE-CRYSTALS [J].

NAZERI, A ;

KAHN, H ;

BENDER, B ;

ALLEN, C .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (09) :2450-2454

[8] SYNTHESIS AND CHARACTERIZATION OF RF-PLANAR MAGNETRON-SPUTTERED KTAXNB1-XO3 THIN-FILMS [J].

SASHITAL, SR ;

KRISHNAKUMAR, S ;

ESENER, S .

APPLIED PHYSICS LETTERS, 1993, 62 (23) :2917-2919

[9] EFFECT OF SUBSTRATES AND BOTTOM ELECTRODES ON THE FORMATION OF KTN THIN FILM [J].

Wang, Shimin ;

Wang, Longhai ;

Zhou, Taosheng ;

Zhang, Tianjin ;

Xiong, Xinming ;

Kuang, Anxiang .

FERROELECTRICS, 1996, 186 :193-198

[10] Preparation of highly oriented KTN/SrTiO3(111), KTN/SrTiO3(100) thin films by sol-gel method [J].

Wang, SM ;

Zhon, TS ;

Wang, LH ;

Kuang, AX .

FERROELECTRICS, 1997, 195 (1-4) :259-263

← 1 2 →