Vertical GaN Power Diodes With a Bilayer Edge Termination

被引：98

作者：

Dickerson, Jeramy R. ^{[1
]}

Allerman, Andrew A. ^{[1
]}

Bryant, Benjamin N. ^{[1
]}

Fischer, Arthur J. ^{[1
]}

King, Michael P. ^{[1
]}

Moseley, Michael W. ^{[1
]}

Armstrong, Andrew M. ^{[1
]}

Kaplar, Robert J. ^{[1
]}

Kizilyalli, Isik C. ^{[2
]}

Aktas, Ozgur ^{[2
]}

Wierer, Jonathan J., Jr. ^{[1
,3
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Avogy Inc, San Jose, CA 95134 USA

[3] Lehigh Univ, Bethlehem, PA 18015 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 01期

关键词：

Avalanche breakdown; gallium nitride; p-n junctions; power semiconductor devices; PERFORMANCE;

D O I：

10.1109/TED.2015.2502186

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (10(4) - 10(5) cm(-2)) GaN substrate, and has a 15-mu m-thick n-type drift layer with a free carrier concentration of 5x10(15) cm(-3). The ET structure is formed by N implantation into the p(+)-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type drift region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. Simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.

引用

页码：419 / 425

页数：7

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