Ultraviolet light emitting diode with n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction

被引：41
|
作者：
Han, Won Suk [1 ]
Kim, Young Yi [1 ]
Kong, Bo Hyun [1 ]
Cho, Hyung Koun [1 ]
机构：
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea
来源：
THIN SOLID FILMS | 2009年 / 517卷 / 17期
关键词：
LED; UV; Sputtering; ZnO; GaN;
D O I：
10.1016/j.tsf.2009.03.149
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and EL results showed that the improved device performances such as lower turn-on voltage and true ultraviolet emission were achieved with the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of energy barriers for the supply of electrons and holes into intrinsic ZnO and recombination in the intrinsic ZnO with the absence of deep-level emission. (c) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：5106 / 5109
页数：4
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