Pressure-induced isostructural electronic topological transitions in 2H-MoTe2: x-ray diffraction and first-principles study

被引:2
作者
Bera, Achintya [1 ]
Singh, Anjali [2 ]
Gupta, Satyendra Nath [1 ]
Glazyrin, K. [3 ]
Muthu, D. V. S. [1 ]
Waghmare, U., V [4 ]
Sood, A. K. [1 ]
机构
[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
[2] Ctr Study Sci Technol & Policy, Bangalore 560094, Karnataka, India
[3] DESY, Photon Sci, Notkestr 85, D-22607 Hamburg, Germany
[4] Jawaharlal Nehru Ctr Adv Sci Res, Theoret Sci Unit, Bangalore 560064, Karnataka, India
关键词
Lifshitz transition; electronic topological transition; transition metal dichalcogenide; high pressure; x-ray diffraction; density functional theory; PHASE-TRANSITION; MOS2; MOTE2;
D O I
10.1088/1361-648X/abaeac
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Synchrotron x-ray diffraction measurements on powder 2H-MoTe2 (P6(3)/mmc) up to similar to 46 GPa have been performed along with first-principles based density functional theoretical analysis to probe the isostructural transition in low pressure regime and two electronic topological transitions (ETT) of Lifshitz-type in high pressure regime. The low pressure isostructural transition at similar to 7 GPa is associated with the lattice parameter ratio c/a anomaly and the change in the compressibility of individual layers. The pressure dependence of the volume by linearizing the Birch-Murnaghan equation of state as a function of Eulerian strain shows a clear change of the bulk modulus at the ETT pressure of similar to 20 GPa. The minimum of c/a ratio around 32 GPa is associated with the change in topology of electron pockets marked as second ETT of Lifshitz-type. We do not observe any structural transition up to the maximum applied pressure of similar to 46 GPa under quasi-hydrostatic condition.
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页数:8
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