Surface-Dominated Transport on a Bulk Topological Insulator

被引：68

作者：

Barreto, Lucas ^{[2
]}

Kuehnemund, Lisa ^{[3
]}

Edler, Frederik ^{[3
]}

Tegenkamp, Christoph ^{[3
]}

Mi, Jianli ^{[4
]}

Bremholm, Martin ^{[4
]}

Iversen, Bo Brummerstedt ^{[4
]}

Frydendahl, Christian ^{[2
]}

Bianchi, Marco ^{[2
]}

Hofmann, Philip ^{[1
,2
]}

机构：

[1] Aarhus Univ, Dept Phys & Astron, Interdisciplinary Nanosci Ctr iNANO, DK-8000 Aarhus C, Denmark

[2] Aarhus Univ, Dept Phys & Astron, Interdisciplinary Nanosci Ctr iNANO, DK-8000 Aarhus C, Denmark

[3] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany

[4] Aarhus Univ, Dept Chem, Interdisciplinary Nanosci Ctr iNANO, Ctr Mat Crystallog, DK-8000 Aarhus C, Denmark

来源：

NANO LETTERS | 2014年 / 14卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

Topological insulators; Bi2Te2Se; nanoscale four-point probe; angle-resolved photoemission; scanning tunneling spectroscopy; CONDUCTIVITY MEASUREMENTS; STATE; TRANSITION;

D O I：

10.1021/nl501489m

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining bulk conductivity, it is challenging to achieve surface-dominated transport. Here we use nanoscale four-point setups with a variable contact distance on an atomically clean surface of bulk-insulating Bi2Te2Se. We show that the transport at 30 K is two-dimensional rather than three-dimensional, that is, surface-dominated, and we find a surface state mobility of 390(30) cm(2) V-1 s(-1) at 30 K at a carrier concentration of 8.71(7) x 10(12) cm(-2).

引用

页码：3755 / 3760

页数：6

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