Organic thin-film transistors with high mobilities and low operating voltages based on 5,5′-bis-biphenyl-dithieno[3,2-b:2′,3′-d]thiophene semiconductor and polymer gate dielectric

被引:37
作者
Sun, Yanming [1 ]
Liu, Yunqi [1 ]
Ma, Yongqiang [1 ]
Di, Chongan [1 ]
Wang, Ying [1 ]
Wu, Weiping [1 ]
Yu, Gui [1 ]
Hu, Wenping [1 ]
Zhu, Daoben [1 ]
机构
[1] Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing 100080, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2209213
中图分类号
O59 [应用物理学];
学科分类号
摘要
Employing 5,5(')-bis-biphenyl-dithieno[3,2-b:2('),3(')-d]thiophene (BPDTT) as semiconducting layer and poly(vinyl alcohol) (PVA) as gate dielectric layer, we have fabricated organic thin-film transistors. These devices exhibit excellent field-effect performances with a high mobility of up to 0.6 cm(2)/V s and a very low operating voltage (< 1 V) at room temperature. The single crystal of BPDTT was grown and analyzed. The high performances are mainly attributed to the close herringbone packing of BPDTT molecules and the high homogeneity between PVA and BPDTT molecules. (c) 2006 American Institute of Physics.
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页数:3
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共 21 条
[1]   Pentacene-based radio-frequency identification circuitry [J].
Baude, PF ;
Ender, DA ;
Haase, MA ;
Kelley, TW ;
Muyres, DV ;
Theiss, SD .
APPLIED PHYSICS LETTERS, 2003, 82 (22) :3964-3966
[2]   High-stability ultrathin spin-on benzocyclobutene gate dielectric for polymer field-effect transistors [J].
Chua, LL ;
Ho, PKH ;
Sirringhaus, H ;
Friend, RH .
APPLIED PHYSICS LETTERS, 2004, 84 (17) :3400-3402
[3]   An electrophoretic ink for all-printed reflective electronic displays [J].
Comiskey, B ;
Albert, JD ;
Yoshizawa, H ;
Jacobson, J .
NATURE, 1998, 394 (6690) :253-255
[4]  
Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
[5]  
2-9
[6]   Organic electronics on paper [J].
Eder, F ;
Klauk, H ;
Halik, M ;
Zschieschang, U ;
Schmid, G ;
Dehm, C .
APPLIED PHYSICS LETTERS, 2004, 84 (14) :2673-2675
[7]   Low-voltage organic transistors with an amorphous molecular gate dielectric [J].
Halik, M ;
Klauk, H ;
Zschieschang, U ;
Schmid, G ;
Dehm, C ;
Schütz, M ;
Maisch, S ;
Effenberger, F ;
Brunnbauer, M ;
Stellacci, F .
NATURE, 2004, 431 (7011) :963-966
[8]  
Huitema HEA, 2002, ADV MATER, V14, P1201, DOI 10.1002/1521-4095(20020903)14:17<1201::AID-ADMA1201>3.0.CO
[9]  
2-5
[10]   High-mobility polymer gate dielectric pentacene thin film transistors [J].
Klauk, H ;
Halik, M ;
Zschieschang, U ;
Schmid, G ;
Radlik, W ;
Weber, W .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) :5259-5263