Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors

Combining low-dimensional layers of dissimilar metal oxide materials to form a heterojunction structure offers a potent strategy to improve the performance and stability of thin-film transistors (TFTs). Here, we study the impact of channel layer thicknesses on the operating characteristics of In2O3/ZnO heterojunction TFTs prepared via sputtering. The conduction band offset present at the In2O3/ZnO heterointerface affects the device's operating characteristics, as is the thickness of the individual oxide layers. The latter is investigated using a variety of experimental and computational modeling techniques. An average field-effect mobility (mu(FE)) of > 50 cm(2) V-1 s(-1), accompanied by a low threshold voltage and a high on/off ratio (& SIM;10(8)), is achieved using an optimal channel configuration. The high mu(FE) in these TFTs is found to correlate with the presence of a quasi-two-dimensional electron gas at the In2O3/ZnO interface. This work provides important insight into the operating principles of heterojunction metal oxide TFTs, which can aid further developments.