High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide

被引：13

作者：

Liang, Shibo ^{[1
]}

Zhang, Zhiyong ^{[1
]}

Si, Jia ^{[1
]}

Zhong, Donglai ^{[1
]}

Peng, Lian-Mao ^{[1
]}

机构：

[1] Peking Univ, Key Lab Phys & Chem Nanodevices, Dept Elect, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 06期

基金：

美国国家科学基金会;

关键词：

GATE DIELECTRICS; THIN-FILMS; DEVICES; GROWTH;

D O I：

10.1063/1.4892918

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-performance p-type carbon nanotube (CNT) transistors utilizing yttrium oxide as gate dielectric are presented by optimizing oxidization and annealing processes. Complementary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs) are then fabricated on CNTs, and the p- and n-type devices exhibit symmetrical high performances, especially with low threshold voltage near to zero. The corresponding CMOS CNT inverter is demonstrated to operate at an ultra-low supply voltage down to 0.2 V, while displaying sufficient voltage gain, high noise margin, and low power consumption. Yttrium oxide is proven to be a competitive gate dielectric for constructing high-performance CNT CMOS FETs and integrated circuits. (C) 2014 AIP Publishing LLC.

引用

页数：4

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