Zeeman spectroscopy of the D1 bound exciton in 3C-, and 4H-SiC

被引:7
作者
Egilsson, T [1 ]
Ivanov, IG
Henry, A
Janzén, E
机构
[1] Linkoping Univ, IFM, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[2] ABB Corp Res, S-72178 Vasteras, Sweden
关键词
excitons; SiC; photoluminescence;
D O I
10.1016/S0921-4526(99)00602-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have studied the D1 bound exciton (BE) in 3C-SiC (cubic) and 4H-SiC (hexagonal) by means of Zeeman spectroscopy. We show that the D-1-BE can be described by an electron-hole pair consisting of an (L-e = 0, S-e = 1/2) electron and a (L-h = 1, S-h = 1/2) hole, influenced by a number of interactions. In order to model the behaviour of the D-1-BE in magnetic field, an appropriate Hamiltonian equation is solved by using perturbation theory. The spin-orbit parameter and orbital g-value are small, indicating that the hole is tightly bound. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:677 / 680
页数:4
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