Experimental study of 112 Gb/s short reach transmission employing PAM formats and SiP intensity modulator at 1.3 μm

被引:115
作者
Chagnon, Mathieu [1 ]
Osman, Mohamed [1 ]
Poulin, Michel [2 ]
Latrasse, Christine [2 ]
Gagne, Jean-Frederic [2 ]
Painchaud, Yves [2 ]
Paquet, Carl [2 ]
Lessard, Stephane [3 ]
Plant, David [1 ]
机构
[1] McGill Univ, Dept Elect & Comp Engn, Photon Syst Grp, Montreal, PQ H3A 0E9, Canada
[2] Tera Xion, Quebec City, PQ G1P 4S8, Canada
[3] Ericsson Canada, Montreal, PQ H4P 2N2, Canada
关键词
MACH-ZEHNDER MODULATOR; SILICON; VOLTAGE;
D O I
10.1364/OE.22.021018
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present a Silicon Photonic (SiP) intensity modulator operating at 1.3 mu m with pulse amplitude modulation formats for short reach transmission employing a digital to analog converter for the RF signal generator, enabling pulse shaping and precompensation of the transmitter's frequency response. Details of the SiP Mach-Zehnder interfometer are presented. We study the system performance at various bit rates, PAM orders and propagation distances. To the best of our knowledge, we report the first demonstration of a 112 Gb/s transmission over 10 km of SMF fiber operating below pre-FEC BER threshold of 3.8 x 10(-3) employing PAM-8 at 37.4 Gbaud using a fully packaged SiP modulator. An analytical model for the Q-factor metric applicable for multilevel PAM-N signaling is derived and accurately experimentally verified in the case of Gaussian noise limited detection. System performance is experimentally investigated and it is demonstrated that PAM order selection can be optimally chosen as a function of the desired throughput. We demonstrate the ability of the proposed transmitter to exhibit software-defined transmission for short reach applications by selecting PAM order, symbol rate and pulse shape. (C) 2014 Optical Society of America
引用
收藏
页码:21018 / 21036
页数:19
相关论文
共 26 条
[1]  
Agrawal GP, 2005, LIGHTWAVE TECHNOLOGY: TELECOMMUNICATION SYSTEMS, P1, DOI 10.1002/047174140X
[2]   Wide-wavelength-band (30 nm) 10-Gb/s operation of InP-based Mach-Zehnder modulator with constant driving voltage of 2 Vpp [J].
Akiyama, S ;
Itoh, H ;
Takeuchi, T ;
Kuramata, A ;
Yamamoto, T .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (07) :1408-1410
[3]  
[Anonymous], 2010, 8023BA IEEE
[4]  
[Anonymous], ITU T REC G 975 1
[5]   Monolithic silicon chip with 10 modulator channels at 25 Gbps and 100-GHz spacing [J].
Chen, Long ;
Doerr, Christopher R. ;
Dong, Po ;
Chen, Young-kai .
OPTICS EXPRESS, 2011, 19 (26) :946-951
[6]   Analysis of soft-decision FEC on non-AWGN channels [J].
Cho, Junho ;
Xie, Chongjin ;
Winzer, Peter J. .
OPTICS EXPRESS, 2012, 20 (07) :7915-7928
[7]  
De Dobbelaere P., 2012, P IEEE OPT INT C OI
[8]   High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators [J].
Dong, Po ;
Chen, Long ;
Chen, Young-kai .
OPTICS EXPRESS, 2012, 20 (06) :6163-6169
[9]  
Kai Y., 2013, P EUR C OPT COMM C E
[10]  
Karar A. S., 2012, P EUR C OPT COMM C E