InGaN p-i-n ultraviolet - A band-pass photodetectors

被引：5

作者：

Ko, T. K. ^{[1
]}

Shei, S. C.

Chang, S. J.

Chiou, Y. Z.

Lin, R. M.

Chen, W. S.

Shen, C. F.

Chang, C. S.

Lin, K. W.

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Epitech Technol Corp, Hsin Shi 744, Taiwan

[4] So Taiwan Univ Technol, Dept Elect Engn, Tainan 710, Taiwan

[5] Chang Gung Univ, Inst Electroopt Engn, Tao Yuan 333, Taiwan

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 2006年 / 153卷 / 04期

关键词：

D O I：

10.1049/ip-opt:20050083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaN p-i-n ultraviolet (UV)-A band-pass photodetectors (PDs) with indium-tin-oxide (ITO) contact and with flip-chip (FC) technology were both fabricated and characterised. With -5 V applied bias, it was found that measured dark currents were 7 x 10(-10) and 4 x 10(-10) A for FC p-i-n PDs with i-In0.1Ga0.9N and i-In0.05Ga0.95N active layers, respectively. With an incident light wavelength of 3 85 nm, it was found that external quantum efficiencies of FC p-i-n PD and ITO p-i-n PD were around 67 and 35%, respectively. The rejection ratios of FC p-i-n PD were also found to be larger than those observed from ITO p-i-n PD.

引用

页码：212 / 214

页数：3

共 13 条

[1] Characteristics of back-illuminated visible-blind UV photodetector based on AlxGa1-xN p-i-n photodiodes [J].

Chae, KS ;

Kim, DW ;

Kim, BS ;

Som, SJ ;

Lee, IH ;

Lee, CR .

JOURNAL OF CRYSTAL GROWTH, 2005, 276 (3-4) :367-373

[2] Nitride-based LEDs with p-InGaN capping layer [J].

Chang, SJ ;

Chen, CH ;

Chang, PC ;

Su, YK ;

Chen, PC ;

Jhou, YD ;

Hung, H ;

Wang, SM ;

Huang, BR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) :2567-2570

[3] InGaN-GaN multiquantum-well blue and green light-emitting diodes [J].

Chang, SJ ;

Lai, WC ;

Su, YK ;

Chen, JF ;

Liu, CH ;

Liaw, UH .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :278-283

[4] 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes [J].

Chang, SJ ;

Kuo, CH ;

Su, YK ;

Wu, LW ;

Sheu, JK ;

Wen, TC ;

Lai, WC ;

Chen, JF ;

Tsai, JM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) :744-748

[5] Nitride-based p-i-n bandpass photodetectors [J].

Chiou, YZ .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (03) :172-174

[6] Photo-CVD SiO2 layers on AlGaN and AlGaN-GaN MOSHFET [J].

Chiou, YZ ;

Chang, SJ ;

Su, YK ;

Wang, CK ;

Lin, TK ;

Huang, BR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (08) :1748-1752

[7] High detectivity InGaN-GaN multiquantum well p-n junction photodiodes [J].

Chiou, YZ ;

Su, YK ;

Chang, SJ ;

Gong, J ;

Lin, YC ;

Liu, SH ;

Chang, CS .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (05) :681-685

[8] Growth and UV-A sensor applications of MgCdS/ZnCdS superlattices [J].

Kobayashi, M ;

Ueno, J ;

Enami, M ;

Katsuta, S ;

Ichiba, A ;

Ogura, K ;

Onomitsu, K ;

Horikoshi, Y .

JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :273-277

[9] High-performance GaN p-n junction photodetectors for solar ultraviolet applications [J].

Monroy, E ;

Munoz, E ;

Sanchez, FJ ;

Calle, F ;

Calleja, E ;

Beaumont, B ;

Gibart, P ;

Munoz, JA ;

Cusso, F .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (09) :1042-1046

[10] SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES [J].

NAKAMURA, S ;

SENOH, M ;

IWASA, N ;

NAGAHAMA, S ;

YAMADA, T ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B) :L1332-L1335

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