Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te

被引：3

作者：

Zha, Gangqiang ^{[1
]}

Jie, Wanqi ^{[1
]}

Tan, Tingting ^{[1
]}

Wang, Linghang ^{[1
]}

Zeng, Dongmei ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Coll Mat Sci & Engn, Xian 710072, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2006年 / 432卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

CdZnTe; dislocations; IR transmittance; PL;

D O I：

10.1016/j.msea.2006.06.079

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Dislocations were introduced into CdZnTe wafers by the means of bending deformation at an elevated temperature. The average IR transmittance of CdZnTe wafers was found to be decreased to 44% after deformation from 64% before. The polarization absorption of dangling-bond electrons in dislocations should be responsible for the decrease of IR transmittance. In photoluminescence measurement, the shallow donor-acceptor pair transition peak at 1.557 eV and its first longitudinal optical phonon replica were detected in CdZnTe after deformation. In defect-related region, a new band D-complex located at 1.508 eV appeared, which should be attributed to defect levels introduced by dislocations. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：126 / 128

页数：3

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