BaTiO3/SrTiO3 (BTO/STO) multi-layered films on MgO(100) substrates were fabricated by RF sputtering method. BaTiO3 and SrTiO3 were alternately deposited using two ceramic targets. A solid solution film with a chemical composition of (Ba0.5Sr0.5)TiO3 was also prepared. X-ray pole figures indicated that the films had an epitaxial relation with the substrate. Planer electrodes were formed on the films using a lithography technique. The complex admittance of the thin film was measured with an impedance analyzer from I MHz to 3 GHz. Dielectric permittivity of the films was determined from admittance data using an electromagnetic field analysis. The film of [(BaTiO3)(10)/(SrTiO3)(10)](50) showed a high dielectric constant up to 850 in comparison with the solid solution film that of 200.