Dielectric property change from perovskite type oxide films with multi-layered structures

被引:0
作者
Matsuo, Takatoshi [1 ]
Teranishi, Takashi [1 ]
Harigai, Takakiyo [1 ]
Nam, Song-Min [1 ]
Nam, Song-Min [1 ]
Kakemoto, Hirofumi [1 ]
Wada, Satoshi [1 ]
Tsurumi, Takaaki [1 ]
机构
[1] Tokyo Inst Technol, Meguro Ku, Tokyo 1528550, Japan
来源
TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 31, NO 1 | 2006年 / 31卷 / 01期
关键词
BaTiO3; SrTiO3; multi-layered film; RF-sputtering; dielectric constant; microwave;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
BaTiO3/SrTiO3 (BTO/STO) multi-layered films on MgO(100) substrates were fabricated by RF sputtering method. BaTiO3 and SrTiO3 were alternately deposited using two ceramic targets. A solid solution film with a chemical composition of (Ba0.5Sr0.5)TiO3 was also prepared. X-ray pole figures indicated that the films had an epitaxial relation with the substrate. Planer electrodes were formed on the films using a lithography technique. The complex admittance of the thin film was measured with an impedance analyzer from I MHz to 3 GHz. Dielectric permittivity of the films was determined from admittance data using an electromagnetic field analysis. The film of [(BaTiO3)(10)/(SrTiO3)(10)](50) showed a high dielectric constant up to 850 in comparison with the solid solution film that of 200.
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页码:105 / 108
页数:4
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