Dielectric property change from perovskite type oxide films with multi-layered structures

被引：0

作者：

Matsuo, Takatoshi ^{[1
]}

Teranishi, Takashi ^{[1
]}

Harigai, Takakiyo ^{[1
]}

Nam, Song-Min ^{[1
]}

Kakemoto, Hirofumi ^{[1
]}

Wada, Satoshi ^{[1
]}

Tsurumi, Takaaki ^{[1
]}

机构：

[1] Tokyo Inst Technol, Meguro Ku, Tokyo 1528550, Japan

来源：

TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 31, NO 1 | 2006年 / 31卷 / 01期

关键词：

BaTiO3; SrTiO3; multi-layered film; RF-sputtering; dielectric constant; microwave;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

BaTiO3/SrTiO3 (BTO/STO) multi-layered films on MgO(100) substrates were fabricated by RF sputtering method. BaTiO3 and SrTiO3 were alternately deposited using two ceramic targets. A solid solution film with a chemical composition of (Ba0.5Sr0.5)TiO3 was also prepared. X-ray pole figures indicated that the films had an epitaxial relation with the substrate. Planer electrodes were formed on the films using a lithography technique. The complex admittance of the thin film was measured with an impedance analyzer from I MHz to 3 GHz. Dielectric permittivity of the films was determined from admittance data using an electromagnetic field analysis. The film of [(BaTiO3)(10)/(SrTiO3)(10)](50) showed a high dielectric constant up to 850 in comparison with the solid solution film that of 200.

引用

页码：105 / 108

页数：4

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