Optical characterisation of pulsed laser deposited SiC films

被引：9

作者：

Schlaf, M ^{[1
]}

Sands, D ^{[1
]}

Key, PH ^{[1
]}

机构：

[1] Univ Hull, Dept Phys, Hull HU6 7RX, N Humberside, England

来源：

APPLIED SURFACE SCIENCE | 2000年 / 154卷

关键词：

silicon carbide; SiC; infrared reflection absorption spectroscopy; simulated annealing; pulsed laser deposition;

D O I：

10.1016/S0169-4332(99)00410-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of SiC were deposited by pulsed laser deposition on silicon and fused silica substrates at room temperature and 1125 K. The films were analysed by infrared reflection absorption spectroscopy (IRRAS) and the resulting spectra were characterised with a model to determine the film thickness and the crystal quality which is higher for the film deposited at 1125 K. The data obtained from UV/vis transmission spectroscopy were used to determine the optical bandgap (E-optical = 1.3 eV). (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：83 / 88

页数：6

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