Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy

被引：5

作者：

Lee, S. C. ^{[1
,2
]}

Ng, S. S. ^{[1
]}

Abu Hassan, H. ^{[1
]}

Hassan, Z. ^{[1
]}

Zainal, N. ^{[1
]}

Novikov, S. V. ^{[3
]}

Foxon, C. T. ^{[3
]}

Kent, A. J. ^{[3
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res Lab, George Town 11800, Malaysia

[2] Univ Malaya, Fac Sci, Dept Phys, Kuala Lumpur 50603, Malaysia

[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2014年 / 146卷 / 1-2期

基金：

英国工程与自然科学研究理事会;

关键词：

Nitrides; Fourier transform infrared spectroscopy (FTIR); Optical properties; Phonons; Dielectric properties; III-NITRIDE SEMICONDUCTORS; OPTICAL PHONON FREQUENCIES; PHASE-TRANSITION; LATTICE-DYNAMICS; GALLIUM NITRIDE; SELF-ENERGY; ZINCBLENDE; GAAS; WURTZITE; MODES;

D O I：

10.1016/j.matchemphys.2014.03.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical properties of free standing cubic gallium nitride grown by molecular beam epitaxy system are investigated by a polarized infrared (IR) reflectance technique. A strong reststrahlen band, which reveals the bulk-like optical phonon frequencies, is observed. Meanwhile, continuous oscillation fringes, which indicate the sample consists of two homogeneous layers with different dielectric constants, are observed in the non-reststrahlen region. By obtaining the first derivative of polarized IR reflectance spectra measured at higher angles of incidence, extra phonon resonances are identified at the edges of the reststrahlen band. The observations are verified with the theoretical results simulated based on a multi-oscillator model. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：121 / 128

页数：8

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