P-type doping characteristics of GaInNAs:Be grown by solid source molecular beam epitaxy

被引：21

作者：

Matsuura, T ^{[1
]}

Miyamoto, T ^{[1
]}

Makino, S ^{[1
]}

Ohta, M ^{[1
]}

Matsui, Y ^{[1
]}

Koyama, F ^{[1
]}

机构：

[1] Tokyo Inst Technol, Microsyst Res Ctr, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 4A期

关键词：

GaInNAs; GaNAs; beryllium doping; p-type doping; specific contact resistance; ohmic contact; solid source molecular beam epitaxy;

D O I：

10.1143/JJAP.43.L433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the doping and electrical characteristics of p-type GaInNAs for use in a p-contact layer and in the p-distributed Bragg reflectors (p-DBRs) of surface emitting lasers. Beryllium doping was applied to GaInNAs grown by solid source molecular beam epitaxy with the nitrogen radical. The doping efficiency for the lattice-matched GaInNAs is similar to that of the GaAs, and a slight deterioration in hole mobility indicates the alloy scattering of the GaInNAs.

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页码：L433 / L435

页数：3

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