Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

被引：164
作者：
Adelmann, C
Brault, J
Jalabert, D
Gentile, P
Mariette, H
Mula, G
Daudin, B
机构：
[1] CEA, Dept Rech Fondamentale Mat Condensee, SPMM, F-38054 Grenoble 9, France
[2] Univ Grenoble 1, CNRS, Spectrometrie Phys Lab, UMR C5588, F-38042 St Martin Dheres, France
[3] INFM, I-09042 Monserrato, CA, Italy
[4] Univ Cagliari, Dipartimento Fis, I-09042 Monserrato, CA, Italy
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 12期
关键词：
D O I：
10.1063/1.1471923
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Ga surface coverage during the growth of GaN by plasma-assisted molecular-beam epitaxy (PAMBE) has been systematically studied by reflection high-energy electron diffraction as a function of the Ga flux and the substrate temperature. As a consequence, a diagram is depicted, which describes the Ga surface coverage during PAMBE as function of growth conditions. In particular, we show that a region exists in this diagram, in which the Ga surface coverage is independent of fluctuations in the Ga flux or the substrate temperature and which forms a "growth window" for GaN growth. The influence of the Ga surface coverage on the GaN surface morphology and the growth kinetics is discussed. (C) 2002 American Institute of Physics.
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页码：9638 / 9645
页数：8
相关论文
共 21 条
[1]   Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations [J].
Adelmann, C ;
Langer, R ;
Feuillet, G ;
Daudin, B .
APPLIED PHYSICS LETTERS, 1999, 75 (22) :3518-3520
[2]  
BHIDE VG, 1958, PHYSICA, V24, P817
[3]  
BRIOT O, 1998, GROUP 3 NITRIDE SEMI, P73
[4]   Pit formation in GaInN quantum wells [J].
Chen, Y ;
Takeuchi, T ;
Amano, H ;
Akasaki, I ;
Yamano, N ;
Kaneko, Y ;
Wang, SY .
APPLIED PHYSICS LETTERS, 1998, 72 (06) :710-712
[5]   GaN evaporation in molecular-beam epitaxy environment [J].
Grandjean, N ;
Massies, J ;
Semond, F ;
Karpov, SY ;
Talalaev, RA .
APPLIED PHYSICS LETTERS, 1999, 74 (13) :1854-1856
[6]   Surface lifetimes of Ga and growth behavior on GaN(0001) surfaces during molecular beam epitaxy [J].
Guha, S ;
Bojarczuk, NA ;
Kisker, DW .
APPLIED PHYSICS LETTERS, 1996, 69 (19) :2879-2881
[7]   Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy [J].
Heying, B ;
Smorchkova, I ;
Poblenz, C ;
Elsass, C ;
Fini, P ;
Den Baars, S ;
Mishra, U ;
Speck, JS .
APPLIED PHYSICS LETTERS, 2000, 77 (18) :2885-2887
[8]   Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy [J].
Heying, B ;
Averbeck, R ;
Chen, LF ;
Haus, E ;
Riechert, H ;
Speck, JS .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) :1855-1860
[9]   Spatially modified layer properties related to the formation of gallium droplets on GaN(0001) surfaces during plasma-assisted molecular-beam epitaxy [J].
Kruse, C ;
Einfeldt, S ;
Böttcher, T ;
Hommel, D ;
Rudloff, D ;
Christen, J .
APPLIED PHYSICS LETTERS, 2001, 78 (24) :3827-3829
[10]   Formation mechanism of nanotubes in GaN [J].
LilientalWeber, Z ;
Chen, Y ;
Ruvimov, S ;
Washburn, J .
PHYSICAL REVIEW LETTERS, 1997, 79 (15) :2835-2838
123