Impact of Different Antireflection Layers on Cadmium Telluride (CdTe) Solar Cells: a PC1D Simulation Study

被引：23

作者：

Devendra, K. C. ^{[1
]}

Shah, Deb Kumar ^{[2
,3
]}

Alanazi, Amer M. ^{[4
]}

Akhtar, M. Shaheer ^{[2
,3
,5
,6
]}

机构：

[1] Gabriel Elektro AS, Elect Dept, N-9700 Lakselv, Norway

[2] Jeonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 54896, South Korea

[3] Jeonbuk Natl Univ, Solar Energy Res Ctr, Jeonju 54896, South Korea

[4] King Saud Univ, Coll Pharm, Pharmaceut Chem Dept, Riyadh 11451, Saudi Arabia

[5] Jeonbuk Natl Univ, Grad Sch Integrated Energy AI, Jeonju 54896, South Korea

[6] Jeonbuk Natl Univ, New & Renewable Energy Mat Dev Ctr NewREC, Jeonbuk 56332, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2021年 / 50卷 / 04期

关键词：

Antireflection materials; CdTe solar cells; PC1D simulation; optoelectrical properties; conversion efficiency;

D O I：

10.1007/s11664-020-08696-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cadmium telluride (CdTe) is currently known to be one of the reliable cost-effective materials for manufacturing solar cells. In this work, different materials such as magnesium fluoride (MgF2), aluminum trioxide (Al2O3), tin oxide (SnO2), and magnesium oxide (MgO) were applied as a single antireflection coating (ARC) layer and characterized their optoelectrical properties of the resulting CdTe solar cells. A personal computer one-dimensional (PC1D) simulation study was carried out to instigate the overall performance when varying the thickness of the absorber and window layers. Simulation results confirmed that Al2O3 single ARC layer with thickness of 83 nm achieved the best efficiency of 17.81% as compared with the other ARC materials. The Al2O3 single ARC layer resulted in a short-circuit current of 2.89 A and open-circuit voltage of 0.740 V.

引用

页码：2199 / 2205

页数：7

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