Reconstruction transition (4 x 2) → (2 x 4) on the (001) Surfaces of InAs and GaAs

被引:3
作者
Galitsyn, YG [1 ]
Moshchenko, SP [1 ]
Suranov, AS [1 ]
机构
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia
关键词
D O I
10.1134/1.1187930
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Phase transitions involving various atomic configurations on the (001) surfaces of GaAs and InAs were studied by RHEED. A kinetic scheme of the interaction between the As-4 flow and the surface is proposed and the main equations describing the transitions are modified so as to correspond to the As-4 (rather than As-2) flux. A model of the (4 x 2) --> (2 x 4) transition is suggested for reconstruction of a layer of metal atoms with subsequent stabilization by the adsorption of arsenic atoms. A considerable difference of the surface transitions in GaAs from that in InAs consists in greater force constants (more rigid bonds) in the former case. A significant role in the continuous evolution from (2 x 4)beta to (4 x 2) phase in GaAs belongs to metastable disordered phases. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码:174 / 180
页数:7
相关论文
共 21 条
[1]   ARSENIC-DEFICIENT GAAS(001)-(2X4) SURFACES - SCANNING-TUNNELING-MICROSCOPY EVIDENCE FOR LOCALLY DISORDERED (1X2) GA REGIONS [J].
AVERY, AR ;
HOLMES, DM ;
JONES, TS ;
JOYCE, BA ;
BRIGGS, GAD .
PHYSICAL REVIEW B, 1994, 50 (11) :8098-8101
[2]   DOMAIN FORMATION ON THE RECONSTRUCTED GAAS(001) SURFACE [J].
BEHREND, J ;
WASSERMEIER, M ;
DAWERITZ, L ;
PLOOG, KH .
SURFACE SCIENCE, 1995, 342 (1-3) :63-68
[3]   Different As desorption behaviour at step edges on InAs(001) and GaAs(001) surfaces [J].
Behrend, J ;
Wassermeier, M ;
Ploog, KH .
SURFACE SCIENCE, 1997, 372 (1-3) :307-311
[4]   ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :834-837
[5]   INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J].
FOXON, CT ;
JOYCE, BA .
SURFACE SCIENCE, 1975, 50 (02) :434-450
[6]  
Galitsin YG, 1997, PHYS LOW-DIMENS STR, V7, P55
[7]  
Galitsin YG, 1997, PHYS LOW-DIMENS STR, V5-6, P75
[8]  
Galitsyn YG, 1998, DOKL AKAD NAUK+, V359, P48
[9]  
GALITSYN YG, 1998, PISMA ZH TEKH FIZ, V24, P31
[10]  
GALITSYN YG, 1992, POVERKHNOST, V7, P59