Large interband second-order susceptibilities in InxGa1-xN/GaN quantum wells

被引：29

作者：

Schmidt, H ^{[1
]}

Abare, AC ^{[1
]}

Bowers, JE ^{[1
]}

Denbaars, SP ^{[1
]}

Imamoglu, A ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 23期

关键词：

D O I：

10.1063/1.125404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present measurements of second-harmonic generation in interband transitions of InxGa1-xN/GaN multiple quantum well samples. The second-order susceptibility chi((2)) is studied as a function of pump wavelength and quantum well width. For the narrowest wells, we obtain chi((2)) = 1.3 +/- 0.4 x 10(-10) m/V, which is an order of magnitude larger than the intrinsic value for bulk GaN. The corresponding power conversion efficiency was 6.3 x 10(-7). An enhancement of the nonlinearity due to strong internal piezoelectric fields could not be observed. (C) 1999 American Institute of Physics. [S0003-6951(99)04049-8].

引用

页码：3611 / 3613

页数：3

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