In situ integrated tuner approach for load-pull measurement of Si/SiGe:C HBT at 200 GHz

被引：0

作者：

Hasnaoui, I. ^{[1
]}

Pottrain, A. ^{[2
]}

Lacave, T. ^{[2
]}

Chevalier, P. ^{[2
]}

Gloria, D. ^{[2
]}

Gaquiere, C. ^{[1
]}

机构：

[1] IEMN CNRS, Villeneuve Dascq, France

[2] STMicroelectronics, Crolles, France

来源：

ELECTRONICS LETTERS | 2014年 / 50卷 / 15期

关键词：

Heterojunctions - Si-Ge alloys - Heterojunction bipolar transistors;

D O I：

10.1049/el.2014.0186

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Load impedance variations were obtained using an innovative integrated tuner at G-band. The 200 GHz load-pull measurements on a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load-pull characteristics are extracted from a 0.13 x 3 mu m(2) emitter area SiGe HBT. The aim of this study is to provide a solution to avoid losses related to probes and commercial tuners. Thereby, from design to measurements, power setup architecture, calibration and performances at 200 GHz are performed in a non-50 Omega environment. Finally, comparisons between measurements and simulation from a high current model (HICUM) show good agreement, demonstrating the capability of the measurement approach.

引用

页码：1071 / 1072

页数：2