A new design scheme for logic circuits with single electron transistors

被引:39
作者
Uchida, K [1 ]
Matsuzawa, K [1 ]
Toriumi, A [1 ]
机构
[1] Toshiba Co Ltd, Adv LSI Technol Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 7A期
关键词
single electron tunneling; Coulomb blockade; SET; MOSFET; CMOS; dynamic logic circuits;
D O I
10.1143/JJAP.38.4027
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new design scheme for logic circuits utilizing single electron transistors (SETs) is proposed. First, logic operations are implemented in logic trees composed of SETs used as pull-down devices. Second, the supply voltage to SET logic trees is lower than the gate voltage swing of SETs. Third, a clock control concept similar to that of complementary metal-oxide-semiconductor (CMOS) dynamic logic is utilized. Finally: the output voltages of logic trees are amplified to the same voltage as the gate voltage swing of SETs by the CMOS inverters in order to drive the next gates. It is confirmed by the hybrid simulator of single electron tunneling and SPICE that a SET logic circuit, a four-way exclusive OR, operates perfectly. It is concluded that the proposed SET logic is consistent in voltage levels and is realistic for the hybrid circuits of SETs and CMOS.
引用
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页码:4027 / 4032
页数:6
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