Preparation, crystallization and electrical properties of 35CuO•(35-X)MnO•XBi2O3•30SiO2 system (X=0-20 mol%)

Glass ceramics in the system 35CuO center dot(35 - X)MnO center dot XBi2O3 center dot 30SiO(2) (mol%), (X = 0-20), were prepared via melting quenching technique. The effect of replacing MnO by Bi2O3 on the crystallization behavior and electrical properties was studied. XRD results revealed crystallization of cubrite (Cu2O), crednerite (CuMnO2) and bismouth silicates phases. Addition of Bi2O3 leads to inhibition in both the degree of crystallinity and crystallization of crednerite during cooling the melts. Increasing the temperature of heat treatment enhance the crystallization of Bi2SiO5 at lower additions of Bi2O3. Electrical results show increasing in dielectric constant with increasing temperature, and decreased as the addition of Bi2O3 increased. The dielectric constant found to be dependent on the amount of CuMnO2. The conductivity values of the samples indicate the semiconducting nature of the present samples.