+1dBm IIP3, Low Noise Amplifier for Ultra-Wide Band Wireless Applications

被引：0

作者：

Fahmy, Ghazal. A. ^{[1
]}

Kanaya, H. ^{[2
]}

机构：

[1] Natl Telecommun Inst, Elect Dept, Cairo, Egypt

[2] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka, Japan

来源：

2016 28TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (ICM 2016) | 2016年

关键词：

Low noise amplifier; UWB; Linearity; LINEARIZATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm(2).

引用

页码：337 / 340

页数：4

共 45 条

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