+1dBm IIP3, Low Noise Amplifier for Ultra-Wide Band Wireless Applications

被引：0
作者：
Fahmy, Ghazal. A. [1 ]
Kanaya, H. [2 ]
机构：
[1] Natl Telecommun Inst, Elect Dept, Cairo, Egypt
[2] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka, Japan
来源：
2016 28TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (ICM 2016) | 2016年
关键词：
Low noise amplifier; UWB; Linearity; LINEARIZATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm(2).
引用
收藏
页码：337 / 340
页数：4
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