Nano-cluster engineering: A combined ion implantation/co-deposition and ionizing radiation

被引:21
作者
Ila, D
Zimmerman, RL
Muntele, CI
Thevenard, P
Orucevic, F
Santamaria, CL
Guichard, PS
Schiestel, S
Carosella, CA
Hubler, GK
Poker, DB
Hensley, DK
机构
[1] Alabama A&M Univ, Ctr Irradiat Mat, Normal, AL 35762 USA
[2] Univ Lyon 1, F-69365 Lyon, France
[3] USN, Res Lab, Washington, DC 20375 USA
[4] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
关键词
D O I
10.1016/S0168-583X(02)00584-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We have used the energy deposited due to the electronic excitation by post-implantation irradiation to induce the nucleation of nano-clusters of Au in silica. We have produced the Au/silica by two methods. (A) MeV An implantation into silica, (B) producing thin films of a combined Art and silica on a silica substrate, using co-deposition of gold and silica. The process of ion beam assisted nucleation of nano-clusters was used to reduce the threshold implantation dose, or the An concentration in the silica host, required to produce An nano-crystals by at least two orders of magnitude. In this presentation, we applied a similar technique, post-irradiation electronic excitation, to films produced by both ion implantation of Au into silica as well as to films produced using co-deposition of gold and silica. By a co-deposition technique, gold and silica (co-deposited at various concentrations) are grown, then post-irradiated. The resultant An nano-cluster formation was observed and Studied using optical spectroscopy, X-ray diffraction. RBS and TEM. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码:416 / 421
页数:6
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