A 12 x 12 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode array

被引：7
作者：
Zheng, XG [1 ]
Hsu, JS
Sun, X
Hurst, JB
Li, X
Wang, S
Holmes, AL
Campbell, JC
Huntington, AS
Coldren, LA
机构：
[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Optoelect Technol Ctr, Santa Barbara, CA 93106 USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2002年 / 38卷 / 11期
关键词：
D O I：
10.1109/JQE.2002.804297
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a 12 x 12 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was similar to2 and similar to300 nA, and the standard deviation was similar to0.19 and similar to60 nA at unity gain (V-bias = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 mum. It was similar to57% and similar to45% at 1.3 and 1.55 mum, respectively. A bandwidth of 13 GHz was achieved at low gain.
引用
收藏
页码：1536 / 1540
页数：5
相关论文
共 12 条
  • [1] BALCERAK RS, 2000, SPIE C SAN DIEG CA A
  • [2] Waveguide AlInAs/GaAlInAs avalanche photodiode with a gain-bandwidth product over 160GHz
    Cohen-Jonathan, C
    Giraudet, L
    Bonzo, A
    Praseuth, JP
    [J]. ELECTRONICS LETTERS, 1997, 33 (17) : 1492 - 1493
  • [3] FAST, HIGH-DENSITY AVALANCHE PHOTODIODE-ARRAY
    GRAMSCH, E
    SZAWLOWSKI, M
    ZHANG, S
    MADDEN, M
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (04) : 762 - 766
  • [4] Grazioso RF, 1999, IEEE NUCL SCI CONF R, P722, DOI 10.1109/NSSMIC.1999.845769
  • [5] FREQUENCY-RESPONSE THEORY FOR MULTILAYER PHOTODIODES
    HOLLENHORST, JN
    [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1990, 8 (04) : 531 - 537
  • [6] Ultrawide-band/high-frequency photodetectors
    Kato, K
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (07) : 1265 - 1281
  • [7] Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz
    Kinsey, GS
    Campbell, JC
    Dentai, AG
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (08) : 842 - 844
  • [8] Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz
    Lenox, C
    Nie, H
    Yuan, P
    Kinsey, G
    Homles, AL
    Streetman, BG
    Campbell, JC
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (09) : 1162 - 1164
  • [9] Makita K., 1995, P IOOC 95, P36
  • [10] Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product
    Nie, H
    Anselm, KA
    Lenox, C
    Yuan, P
    Hu, C
    Kinsey, G
    Streetman, BG
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (03) : 409 - 411
12