A 12 x 12 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode array

被引:7
作者
Zheng, XG [1 ]
Hsu, JS
Sun, X
Hurst, JB
Li, X
Wang, S
Holmes, AL
Campbell, JC
Huntington, AS
Coldren, LA
机构
[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Optoelect Technol Ctr, Santa Barbara, CA 93106 USA
关键词
D O I
10.1109/JQE.2002.804297
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report a 12 x 12 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was similar to2 and similar to300 nA, and the standard deviation was similar to0.19 and similar to60 nA at unity gain (V-bias = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 mum. It was similar to57% and similar to45% at 1.3 and 1.55 mum, respectively. A bandwidth of 13 GHz was achieved at low gain.
引用
收藏
页码:1536 / 1540
页数:5
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