In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications

被引：32

作者：

Xu, Da-Peng ^{[1
]}

Yu, Lin-Jie ^{[1
]}

Chen, Xu-Dong ^{[1
]}

Chen, Lin ^{[1
]}

Sun, Qing-Qing ^{[1
]}

Zhu, Hao ^{[1
]}

Lu, Hong-Liang ^{[1
]}

Zhou, Peng ^{[1
]}

Ding, Shi-Jin ^{[1
]}

Zhang, David Wei ^{[1
]}

机构：

[1] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2017年 / 12卷

关键词：

Oxygen vacancies; Band alignment; In situ XPS; UPS; Ellipsometry; OFFSETS; OXIDES;

D O I：

10.1186/s11671-017-2068-y

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The density of oxygen vacancies characterization in high-k/metal gate is significant for semiconductor device fabrication. In this work, a new approach was demonstrated to detect the density of oxygen vacancies by in situ x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) measurement. Moreover, the band alignment of the structure with optical band gap measured by spectroscopic ellipsometry (SE) and valence band offset by UPS were reported. The specific areal density of oxygen vacancies in high-k dielectric of HfO2/TiN was obtained by fitting the experiment data to be 8.202 x 10(10)cm(-2). This study would provide an effective approach to characterize the oxygen vacancies based defects which cause threshold voltage shifts and enormous gate leakage in modern MOSFET devices.

引用

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