Effect of N2 addition on growth and properties of titanium nitride films obtained by atmospheric pressure chemical vapor deposition

被引：27

作者：

Huang, HH ^{[1
]}

Hon, MH ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

来源：

THIN SOLID FILMS | 2002年 / 416卷 / 1-2期

关键词：

nitrogen; atmospheric pressure chemical vapor deposition growth characteristic; titanium nitride;

D O I：

10.1016/S0040-6090(02)00606-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Titanium nitride (TiN) films were prepared by atmospheric pressure chemical vapor deposition using TiCl4 and NH3. The effects of N-2 addition on the growth characteristics and electrical resistivity of the TiN films were studied. When more than 20 vol.% N-2 was added into, the growth rate of TiN films decreased dramatically and the large dome-like grain was favorable. The N/Ti ratio and lattice parameter of TiN films decreased with the N-2 volume fraction increasing. The preferred orientation of TiN (2 0 0) was found and the texture coefficient of (2 0 0) linearly increased with increasing of the volume fraction of N-2 added. The resistivity of TiN film slightly increased when 10 vol.% N-2 was added, but it decreased remarkably when more than 20 vol.% N-2 was added. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：54 / 61

页数：8

共 27 条

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