Universal Properties of Materials with the Dirac Dispersion Relation of Low-Energy Excitations

被引：1

作者：

Protogenov, A. P. ^{[1
]}

Chulkov, E. V. ^{[2
,3
,4
]}

机构：

[1] Russian Acad Sci, Inst Appl Phys, Ul Ulyanova 46, Nizhnii Novgorod 603950, Russia

[2] Univ Basque Country, Dept Fis Mat, San Sebastian 20080, Spain

[3] St Petersburg State Univ, St Petersburg 198504, Russia

[4] Natl Res Tomsk State Univ, Tomsk 634050, Russia

来源：

SEMICONDUCTORS | 2015年 / 49卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

TOPOLOGICAL INSULATORS; SUPERCONDUCTORS; TRANSPORT; CLASSIFICATION; SEMIMETALS;

D O I：

10.1134/S1063782615120143

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The N-terminal scheme is considered for studying the contribution of edge states to the response of a two-dimensional topological insulator. A universal distribution of the nonlocal resistance between terminals is determined in the ballistic transport approach. The calculated responses are identical to experimentally observed values. The spectral properties of surface electronic states in Weyl semimetals are also studied. The density of surface states is accurately determined. The universal behavior of these characteristics is a distinctive feature of the considered Dirac materials which can be used in practical applications.

引用

页码：1550 / 1556

页数：7

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