Comparison of fluctuating potentials and donor-acceptor pair transitions in a Cu-poor Cu2ZnSnS4 based solar cell

被引:35
作者
Teixeira, J. P. [1 ,2 ]
Sousa, R. A. [1 ,2 ]
Sousa, M. G. [1 ,2 ]
da Cunha, A. F. [1 ,2 ]
Fernandes, P. A. [1 ,2 ,3 ]
Salome, P. M. P. [4 ]
Gonzalez, J. C. [5 ]
Leitao, J. P. [1 ,2 ]
机构
[1] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal
[2] Univ Aveiro, I3N, P-3810193 Aveiro, Portugal
[3] Inst Politecn Porto, Inst Super Engn Porto, Dept Fis, P-4200072 Oporto, Portugal
[4] Lab Nanostruct Solar Cells LaNaSC, INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal
[5] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
关键词
THIN-FILMS; RADIATIVE RECOMBINATION; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; SULFURIZATION; DEPENDENCE; DEFECTS; BAND;
D O I
10.1063/1.4899057
中图分类号
O59 [应用物理学];
学科分类号
摘要
The structure of the electronic energy levels of a single phase Cu2ZnSnS4 film, as confirmed by Raman Scattering and x-ray diffraction, is investigated through a dependence on the excitation power of the photoluminescence (PL). The behavior of the observed asymmetric band, with a peak energy at similar to 1.22 eV, is compared with two theoretical models: (i) fluctuating potentials and (ii) donor-acceptor pair transitions. It is shown that the radiative recombination channels in the Cupoor film are strongly influenced by tail states in the bandgap as a consequence of a heavy doping and compensation levels. The contribution of the PL for the evaluation of secondary phases is also highlighted. (C) 2014 AIP Publishing LLC.
引用
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页数:4
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