Defects, a challenge for graphene in flexible electronics

被引：11
|
作者：
Giesbers, A. J. M. [1 ]
Bouten, P. C. P. [1 ]
Cillessen, J. F. M. [1 ]
van der Tempel, L. [1 ]
Klootwijk, J. H. [1 ]
Pesquera, A. [2 ]
Centeno, A. [2 ]
Zurutuza, A. [2 ]
Balkenende, A. R. [1 ]
机构：
[1] Philips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, Netherlands
[2] Graphenea SA, A75022608 Tolosa Hiribidea 76, Donostia San Sebastian 20018, Spain
来源：
SOLID STATE COMMUNICATIONS | 2016年 / 229卷
关键词：
Graphene; Flexible; Gas barrier; Defects; Water vapor transmission rate; Stress; Bending; GRAIN-BOUNDARIES; BARRIER FILMS; PERFORMANCE; MEMBRANES; STRENGTH; SHEETS;
D O I：
10.1016/j.ssc.2016.01.002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this work we present the effect of defects in graphene on its potential for application in flexible electronics. We visualize defects at the grain boundaries, transfer defects and local atomic defects. We show that these defects are currently determining the gas barrier properties of graphene. Under strain up to only 2% we show that these defects lead to cracks in the graphene thereby deteriorating its conductivity. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：49 / 52
页数：4
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