Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates

被引：8

作者：

Dvurechenskii, Anatoly ^{[1
,2
]}

Zinovieva, Aigul ^{[1
]}

Zinovyev, Vladimir ^{[1
]}

Nenashev, Alexey ^{[1
,2
]}

Smagina, Zhanna ^{[1
]}

Teys, Sergey ^{[1
]}

Shklyaev, Aleksandr ^{[1
,2
]}

Erenburg, Simon ^{[3
]}

Trubina, Svetlana ^{[3
]}

Borodavchenko, Olga ^{[4
]}

Zhivulko, Vadim ^{[4
]}

Mudryi, Aleksandr ^{[4
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Pr Ac Lavrenteva 13, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Pirogova 2, Novosibirsk 630090, Russia

[3] Nikolaev Inst Inorgan Chem, Novosibirsk 630090, Russia

[4] Natl Acad Sci Belarus, Sci Pract Mat Res Ctr, P Brovki 19, Minsk 220072, BELARUS

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14 NO 12 | 2017年 / 14卷 / 12期

关键词：

molecular beam epitaxy; photoluminescence; quantum dot; SiGe nanostructures; NUCLEATION;

D O I：

10.1002/pssc.201700187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence (PL) properties of combined Ge/Si structures representing a combination of large (200-250 nm) SiGe disk-like quantum dots (QDs) and the groups of smaller (40-50 nm) laterally ordered QDs grown on the nanodisk surface are studied. The experimental results are analyzed basing on the calculations of energy spectra, electron and hole wave functions. It is found that the strain accumulation in multi-layered structure is the main factor providing the room temperature PL. The new type of QD structures that should provide the observation of enhanced PL from SiGe QDs at room temperature is proposed. The structures represent the stacked compact groups of laterally aligned QDs incorporated in Si at the distance 30-40nm above the large nanodisks.

引用

页数：6

共 20 条

[1] A thousand-fold enhancement of photoluminescence in porous silicon using ion irradiation [J].