The photoelectrochemical performances of Sb-doped AgIn5S8 film electrodes prepared by chemical bath deposition

被引:9
作者
Cheng, Kong-Wei [1 ,2 ]
Huang, Chao-Ming [3 ]
Pan, Guan-Ting [4 ]
Huang, Jau-Chyn [5 ]
Lee, Tai-Chou [6 ]
Yang, Thomas C. K. [4 ]
机构
[1] Chang Gung Univ, Dept Chem & Mat Engn, Tao Yuan 333, Taiwan
[2] Chang Gung Univ, Green Technol Res Ctr, Solar Cell Grp, Tao Yuan 333, Taiwan
[3] Kun Shan Univ, Dept Environm Engn, Tainan, Taiwan
[4] Natl Taipei Univ Technol, Dept Chem Engn, Taipei, Taiwan
[5] Ind Technol Res Inst, Energy & Environm Lab, Hsinchu, Taiwan
[6] Natl Chung Cheng Univ, Dept Chem Engn, Chiayi, Taiwan
关键词
Photoelectrochemical reaction; Optical property; Crystalline; Electrode; PHOTOCATALYTIC H-2 EVOLUTION; THIN-FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; SULFIDE; GROWTH; WATER; PHOTORESPONSE; PHOTOLYSIS; HYDROGEN;
D O I
10.1016/j.jphotochem.2008.11.018
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The Sb-doped AgIn5S8 films were grown on indium-tin-oxide substrates using chemical bath deposition. The X-ray diffraction patterns of samples show the polycrystalline AgIn5S8 phase in these films. With the molar ratio of Sb/Ag in the Solution higher than 0.2, the conduction type of samples turns into p-type. The thickness, energy band gaps, and carrier densities of these samples are in the range of 692-1119 nm, 1.71-1.73 eV and 5.75 x 10(14) to 9.85 x 10(14) cm(-3), respectively. The maximum photocurrent density of samples with external potential kept at 1.0 V vs. an Ag/AgCl reference electrode was found to be -2.73 mA/cm(2) under illumination using a 300 Xe lamp system. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:107 / 114
页数:8
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