Effect of the O2 / Ar Pressure Ratio on the Microstructure and Surface Morphology of Epi-MgO / IBAD-MgO Templates for GdBa2Cu3O7-δ Coated Conductors

被引：5
作者：
Luo Qiang [1 ]
Liu Lin-Fei [1 ]
Xiao Gui-Na [1 ]
Li Yi-Jie [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Dept Phys & Astron, Shanghai 200240, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2014年 / 31卷 / 03期
基金：
中国国家自然科学基金;
关键词：
BUFFER LAYERS; THIN-FILMS; DEPOSITION;
D O I：
10.1088/0256-307X/31/3/037402
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
High-quality epi-MgO buffer layers under different O-2 / Ar pressure ratios are fabricated by rf magnetron sputtering on textured IBAD-MgO templates. Under the total deposition pressure remaining constant (14 Pa), the effect of changing the ratio of O-2 / Ar pressure from 1: 4 to 3: 2 on the microstructure and surface morphology of epi-MgO films is studied. The microstructure and morphology of epi-MgO are fully characterized by x-ray diffraction, atom force microscope and scanning electron microscope. The best texture quality of epi-MgO with an out-plane Delta omega value of 1.8 degrees and an in-plane Delta Phi value of 5.22 degrees are obtained under the ratio of O-2 / Ar pressure 3:2. Further, the surface morphology indicates that the surface of epi-MgO is smooth with rms surface roughness about 4.7 nm at O-2 / Ar pressure ratio 3: 2. After that, GdBa2Cu3O7-delta. (GBCO) layers are deposited on the CeO2 cap layer buffered epi-MgO/IBAD-MgO templates to assess the efficiency of such a buffer layer stack. The critical current density of GBCO films (thickness of 200 nm) is higher than 3 MA/cm(2), indicating that epi-MgO/IBAD-MgO is promising for depositing superconducting layers with a higher critical current density.
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页数：4
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